Current-transport mechanisms in the Au/GaSe:Nd Schottky contact
Yazarlar (4)
Prof. Dr. Hüseyin ERTAP Kafkas Üniversitesi, Türkiye
Dr. Öğr. Üyesi Hatice Kaçuş Atatürk Üniversitesi, Türkiye
Prof. Dr. Şakir Aydoğan Atatürk Üniversitesi, Türkiye
Prof. Dr. Mevlüt Karabulut Gebze Teknik Üniversitesi, Türkiye
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Özgün Makale
(SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
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| Dergi Adı | Journal of Materials Science Materials in Electronics (Q2) | ||
| Dergi ISSN | 0957-4522 Dergi Bilgileri (2020) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 04-2020 |
| Kabul Tarihi | 10-02-2020 | Yayınlanma Tarihi | 19-02-2020 |
| Cilt / Sayı / Sayfa | 31 / 7 / 5198–5204 | DOI | 10.1007/s10854-020-03079-2 |
| Makale Linki | http://link.springer.com/10.1007/s10854-020-03079-2 | ||
| UAK Araştırma Alanları |
Yoğun Madde Fiziği
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| Özet |
| Structural and electrical features of p-type neodymium-doped GaSe single crystal (0.1 at.% Nd) grown by modified Bridgman technique was investigated through X-ray diffraction (XRD) and current–voltage (I–V) measurements. The XRD spectrum reveals that GaSe:Nd single crystal investigated has hexagonal structure (a = 3.750 Å, c = 15.950 Å and z = 4, P63/mmc space group) with preferred orientation along (004). Ohmic contact was realized by evaporating indium (In) on one surface of the GaSe:Nd single crystal at 10–6 Torr while Shottky contact was obtained by evaporating twelve Au dot contacts with 7.85 × 10–3 cm2 area on the other surface of the crystal. The I–V characteristics of Au/GaSe:Nd/In Schottky contact was analysed in the 100–360 K temperature range. The main Schottky diode parameters such as ideality factor, barrier height and the series resistance values were determined as a function of … |
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| Web of Science | 6 |
| Scopus | 6 |
| Google Scholar | 6 |