| Yazarlar |
Doç. Dr. Hüseyin ERTAP
Kafkas Üniversitesi, Türkiye |
Hatice Kaçuş
Türkiye |
|
Şakir Aydoğan
Atatürk Üniversitesi, Türkiye |
|
Mevlüt Karabulut
Gebze Teknik Üniversitesi, Türkiye |
| Özet |
| Structural and electrical features of p-type neodymium-doped GaSe single crystal (0.1 at.% Nd) grown by modified Bridgman technique was investigated through X-ray diffraction (XRD) and current–voltage (I–V) measurements. The XRD spectrum reveals that GaSe:Nd single crystal investigated has hexagonal structure (a = 3.750 Å, c = 15.950 Å and z = 4, P63/mmc space group) with preferred orientation along (004). Ohmic contact was realized by evaporating indium (In) on one surface of the GaSe:Nd single crystal at 10–6 Torr while Shottky contact was obtained by evaporating twelve Au dot contacts with 7.85 × 10–3 cm2 area on the other surface of the crystal. The I–V characteristics of Au/GaSe:Nd/In Schottky contact was analysed in the 100–360 K temperature range. The main Schottky diode parameters such as ideality factor, barrier height and the series resistance values were determined as a function of temperature using conventional I–V method and Norde method. The ideality factor n of the Au/GaSe:Nd/In Schottky contact was observed to decrease while the barrier height Φ b increased with increasing temperature. Temperature dependence of the diode parameters were attributed to the existence of barrier height inhomogeneity by assuming a Gaussian distribution of Au/GaSe:Nd/In Schottky contact. |
| Anahtar Kelimeler |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS |
| Dergi ISSN | 0957-4522 |
| Dergi Tarandığı Indeksler | SCI-Expanded |
| Makale Dili | İngilizce |
| Basım Tarihi | 04-2020 |
| Cilt No | 31 |
| Sayı | 7 |
| Sayfalar | 5198 / 5204 |
| Doi Numarası | 10.1007/s10854-020-03079-2 |
| Makale Linki | http://link.springer.com/10.1007/s10854-020-03079-2 |
| Atıf Sayıları | |
| WoS | 5 |
| SCOPUS | 5 |
| Google Scholar | 5 |
