Current-transport mechanisms in the Au/GaSe:Nd Schottky contact
Yazarlar (4)
Prof. Dr. Hüseyin ERTAP
Kafkas Üniversitesi, Türkiye
Hatice Kaçuş
Atatürk Üniversitesi, Türkiye
Şakir Aydoğan
Atatürk Üniversitesi, Türkiye
Mevlüt Karabulut
Gebze Teknik Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Journal of Materials Science Materials in Electronics | ||
| Dergi ISSN | 0957-4522 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 04-2020 |
| Cilt / Sayı / Sayfa | 31 / 7 / 5198–5204 | DOI | 10.1007/s10854-020-03079-2 |
| Makale Linki | http://link.springer.com/10.1007/s10854-020-03079-2 | ||
| Özet |
| Structural and electrical features of p-type neodymium-doped GaSe single crystal (0.1 at.% Nd) grown by modified Bridgman technique was investigated through X-ray diffraction (XRD) and current–voltage (I–V) measurements. The XRD spectrum reveals that GaSe:Nd single crystal investigated has hexagonal structure (a = 3.750 Å, c = 15.950 Å and z = 4, P63/mmc space group) with preferred orientation along (004). Ohmic contact was realized by evaporating indium (In) on one surface of the GaSe:Nd single crystal at 10–6 Torr while Shottky contact was obtained by evaporating twelve Au dot contacts with 7.85 × 10–3 cm2 area on the other surface of the crystal. The I–V characteristics of Au/GaSe:Nd/In Schottky contact was analysed in the 100–360 K temperature range. The main Schottky diode parameters such as ideality factor, barrier height and the series resistance values were determined as a function of temperature using conventional I–V method and Norde method. The ideality factor n of the Au/GaSe:Nd/In Schottky contact was observed to decrease while the barrier height Φ b increased with increasing temperature. Temperature dependence of the diode parameters were attributed to the existence of barrier height inhomogeneity by assuming a Gaussian distribution of Au/GaSe:Nd/In Schottky contact. |
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| Atıf Sayıları | |
| WoS | 6 |
| SCOPUS | 6 |
| Google Scholar | 6 |