| Yazarlar |
Hüseyin ERTAP
Kafkas Üniversitesi, Türkiye |
Mustafa Yüksek
Kafkas Üniversitesi, Türkiye |
|
Ahmet Karatay
Ankara Üniversitesi, Türkiye |
|
Ayhan Elmalı
Ankara Üniversitesi, Türkiye |
|
Mevlüt Karabulut
Gebze Teknik Üniversitesi, Türkiye |
| Özet |
| The linear absorption, nonlinear absorption (NA), second harmonic generation (SHG) and carrier mobilities of undoped and 0.1 at% Dy doped GaSe single crystals grown by modified Bridgman method have been studied by UV–vis, open aperture Z-scan, SHG and transmission ultrafast pump probe spectroscopy experiments. Both linear absorption and SHG measurements clearly showed that the doping of GaSe crystal with Dy3+ leads to a shift in the linear absorption edge. The mechanisms contributing to the NA behavior were explained and discussed. The photobleaching behaviors of the crystals were investigated by delaying of the probe signal in transmission pump-probe spectroscopy experiments. |
| Anahtar Kelimeler |
| SHG | Linear and nonlinear absorption | Electron mobility | Photobleaching | GaSe | Dysprosium |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | CHINESE JOURNAL OF PHYSICS |
| Dergi ISSN | 0577-9073 |
| Dergi Tarandığı Indeksler | SCI-Expanded |
| Dergi Grubu | Q2 |
| Makale Dili | İngilizce |
| Basım Tarihi | 06-2019 |
| Cilt No | 59 |
| Sayı | 1 |
| Sayfalar | 465 / 472 |
| Doi Numarası | 10.1016/j.cjph.2019.03.014 |
| Makale Linki | http://dx.doi.org/10.1016/j.cjph.2019.03.014 |
