Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals
Yazarlar (6)
G. M. Mamedov Kafkas Üniversitesi, Türkiye
M. Karabulut Kafkas Üniversitesi, Türkiye
Prof. Dr. Hüseyin ERTAP Kafkas Üniversitesi, Türkiye
O. Kodolbaş
Hacettepe Üniversitesi, Türkiye
Hacettepe Üniversitesi, Türkiye
Ö Öktü Hacettepe Üniversitesi, Türkiye
A. Bacioǧlu
Hacettepe Üniversitesi, Türkiye
Hacettepe Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Journal of Luminescence (Q1) | ||
| Dergi ISSN | 0022-2313 Dergi Bilgileri (2009) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 03-2009 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-03-2009 |
| Cilt / Sayı / Sayfa | 129 / 3 / 226–230 | DOI | 10.1016/j.jlumin.2008.09.015 |
| Makale Linki | http://dx.doi.org/10.1016/j.jlumin.2008.09.015 | ||
| UAK Araştırma Alanları |
Yoğun Madde Fiziği
|
||
| Özet |
| The photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals have been investigated as a function of temperature and external electric field. It has been observed that the exciton peaks shift to lower energy in GaSe0.9Te0.1 alloy crystals compared to GaSe crystals. The long wavelength tails of interband photoluminescence, photoconductivity and absorption spectra are determined by the free exciton states and show an Urbach–Martienssen-type dependence to the photon energy. The maxima of the extrinsic photoluminescence and photoconductivity spectra were found to be determined by the acceptor centers with an energy of EA=EV+0.19eV formed by the polytypism and defects complexes that include Se and Te anions. |
| Anahtar Kelimeler |
| Absorption | Bridgmann | Exciton | GaSeTe | Photoconductivity | Photoluminescence |
Science Direct
Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals
| Atıf Sayıları | |
| Web of Science | 10 |
| Scopus | 12 |
| Google Scholar | 18 |