Two photon absorption characteristics of bulk GaTe crystal
Yazarlar (7)
Mustafa Yüksek Kafkas Üniversitesi, Türkiye
Prof. Dr. Hüseyin ERTAP Kafkas Üniversitesi, Türkiye
Ayhan Elmali Ankara Üniversitesi, Türkiye
H. Gul Yaglioglu
Ankara Üniversitesi, Türkiye
Ankara Üniversitesi, Türkiye
Gasan M. Mamedov
Kafkas Üniversitesi, Türkiye
Kafkas Üniversitesi, Türkiye
Mevlüt Karabulut Kafkas Üniversitesi, Türkiye
Mustafa K. Öztürk
Gazi Üniversitesi, Türkiye
Gazi Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Optics and Laser Technology (Q1) | ||
| Dergi ISSN | 0030-3992 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 10-2012 |
| Cilt / Sayı / Sayfa | 44 / 7 / 2178–2181 | DOI | 10.1016/j.optlastec.2012.03.005 |
| Makale Linki | http://dx.doi.org/10.1016/j.optlastec.2012.03.005 | ||
| Özet |
| We have investigated the structural and optical properties of bulk GaTe crystal grown by vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have been investigated by the open aperture Z-scan technique under 1064nm wavelength with 4ns or 65ps pulse durations. The TPA coefficients are greater in ns regime than that of ps regime. Upon increasing intensity of incident light from 5.02×107W/cm2 to 1.07×108W/cm2, the TPA coefficients increased from 3.47×10−6cm/W to 8.53×10−6cm/W for nanosecond excitation. Similarly, when intensity of incident light was increased from 6.81×108W/cm2 to 9.94×108W/cm2 the TPA coefficients increased from 3.53×10−7cm/W to 6.83×10−7cm/W for picosecond excitation. Measured TPA coefficient of GaTe crystal is larger than that of GaSe and GaS layered crystals. |
| Anahtar Kelimeler |
| Nonlinear absorption | Two photon absorption Z-scan | GaTe crystal |
Science Direct
Two photon absorption characteristics of bulk GaTe crystal
| Atıf Sayıları | |
| WoS | 18 |
| SCOPUS | 18 |
| Google Scholar | 23 |