Two photon absorption characteristics of bulk GaTe crystal
Yazarlar (7)
Mustafa Yüksek
Kafkas Üniversitesi, Türkiye
Prof. Dr. Hüseyin ERTAP
Kafkas Üniversitesi, Türkiye
Ayhan Elmali
Ankara Üniversitesi, Türkiye
H. Gul Yaglioglu
Ankara Üniversitesi, Türkiye
Gasan M. Mamedov
Kafkas Üniversitesi, Türkiye
Mevlüt Karabulut
Kafkas Üniversitesi, Türkiye
Mustafa K. Öztürk
Gazi Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Optics and Laser Technology (Q1) | ||
| Dergi ISSN | 0030-3992 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 10-2012 |
| Cilt / Sayı / Sayfa | 44 / 7 / 2178–2181 | DOI | 10.1016/j.optlastec.2012.03.005 |
| Makale Linki | http://dx.doi.org/10.1016/j.optlastec.2012.03.005 | ||
| Özet |
| We have investigated the structural and optical properties of bulk GaTe crystal grown by vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have been investigated by the open aperture Z-scan technique under 1064 nm wavelength with 4 ns or 65 ps pulse durations. The TPA coefficients are greater in ns regime than that of ps regime. Upon increasing intensity of incident light from 5.02×10 7 W/cm 2+ to 1.07×10 8 W/cm 2+, the TPA coefficients increased from 3.47×10 -6 cm/W to 8.53×10 -6 cm/W for nanosecond excitation. Similarly, when intensity of incident light was increased from 6.81×10 8 W/cm 2+ to 9.94×10 8 W/cm 2+ the TPA coefficients increased from 3.53×10 -7 cm/W to 6.83×10 -7 cm/W for picosecond excitation. Measured TPA coefficient of GaTe crystal is larger than that of GaSe and GaS layered crystals. © 2012 Elsevier Ltd. |
| Anahtar Kelimeler |
| Nonlinear absorption | Two photon absorption Z-scan | GaTe crystal |
Science Direct
Two photon absorption characteristics of bulk GaTe crystal
| Atıf Sayıları | |
| WoS | 18 |
| SCOPUS | 18 |
| Google Scholar | 23 |