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Two photon absorption characteristics of bulk GaTe crystal       
Yazarlar
Mustafa Yüksek
Kafkas Üniversitesi, Türkiye
Doç. Dr. Hüseyin ERTAP Doç. Dr. Hüseyin ERTAP
Kafkas Üniversitesi, Türkiye
Elmali Ayhan
Türkiye
Gul Yaglioglu H
Türkiye
Mamedov Gasan M
Türkiye
Mevlüt Karabulut
Kafkas Üniversitesi, Türkiye
Mustafa Kemal Öztürk
Türkiye
Özet
We have investigated the structural and optical properties of bulk GaTe crystal grown by vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have been investigated by the open aperture Z-scan technique under 1064 nm wavelength with 4 ns or 65 ps pulse durations. The TPA coefficients are greater in ns regime than that of ps regime. Upon increasing intensity of incident light from 5.02×10 7 W/cm 2+ to 1.07×10 8 W/cm 2+, the TPA coefficients increased from 3.47×10 -6 cm/W to 8.53×10 -6 cm/W for nanosecond excitation. Similarly, when intensity of incident light was increased from 6.81×10 8 W/cm 2+ to 9.94×10 8 W/cm 2+ the TPA coefficients increased from 3.53×10 -7 cm/W to 6.83×10 -7 cm/W for picosecond excitation. Measured TPA coefficient of GaTe crystal is larger than that of GaSe and GaS layered crystals. © 2012 Elsevier Ltd.
Anahtar Kelimeler
Nonlinear absorption | Two photon absorption Z-scan | GaTe crystal
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı OPTICS AND LASER TECHNOLOGY
Dergi ISSN 0030-3992
Dergi Tarandığı Indeksler SCI-Expanded
Dergi Grubu Q1
Makale Dili İngilizce
Basım Tarihi 10-2012
Cilt No 44
Sayı 7
Sayfalar 2178 / 2181
Doi Numarası 10.1016/j.optlastec.2012.03.005
Makale Linki http://dx.doi.org/10.1016/j.optlastec.2012.03.005