| Yazarlar |
Mustafa Yüksek
Kafkas Üniversitesi, Türkiye |
Hüseyin ERTAP
Kafkas Üniversitesi, Türkiye |
|
Elmali Ayhan
Türkiye |
|
Gul Yaglioglu H
Türkiye |
|
Mamedov Gasan M
Türkiye |
|
Mevlüt Karabulut
Kafkas Üniversitesi, Türkiye |
|
Mustafa Kemal Öztürk
Türkiye |
| Özet |
| We have investigated the structural and optical properties of bulk GaTe crystal grown by vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have been investigated by the open aperture Z-scan technique under 1064 nm wavelength with 4 ns or 65 ps pulse durations. The TPA coefficients are greater in ns regime than that of ps regime. Upon increasing intensity of incident light from 5.02×10 7 W/cm 2+ to 1.07×10 8 W/cm 2+, the TPA coefficients increased from 3.47×10 -6 cm/W to 8.53×10 -6 cm/W for nanosecond excitation. Similarly, when intensity of incident light was increased from 6.81×10 8 W/cm 2+ to 9.94×10 8 W/cm 2+ the TPA coefficients increased from 3.53×10 -7 cm/W to 6.83×10 -7 cm/W for picosecond excitation. Measured TPA coefficient of GaTe crystal is larger than that of GaSe and GaS layered crystals. © 2012 Elsevier Ltd. |
| Anahtar Kelimeler |
| Nonlinear absorption | Two photon absorption Z-scan | GaTe crystal |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | OPTICS AND LASER TECHNOLOGY |
| Dergi ISSN | 0030-3992 |
| Dergi Tarandığı Indeksler | SCI-Expanded |
| Dergi Grubu | Q1 |
| Makale Dili | İngilizce |
| Basım Tarihi | 10-2012 |
| Cilt No | 44 |
| Sayı | 7 |
| Sayfalar | 2178 / 2181 |
| Doi Numarası | 10.1016/j.optlastec.2012.03.005 |
| Makale Linki | http://dx.doi.org/10.1016/j.optlastec.2012.03.005 |
| Atıf Sayıları | |
| WoS | 18 |
| SCOPUS | 17 |
| Google Scholar | 25 |
