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Sub-bandgap analysis of boron doped InSe single crystals by constant photocurrent method       
Yazarlar
Akın Bacıoğlu
Hacettepe Üniversitesi, Türkiye
Doç. Dr. Hüseyin ERTAP Doç. Dr. Hüseyin ERTAP
Kafkas Üniversitesi, Türkiye
Mevlüt Karabulut
Kafkas Üniversitesi, Türkiye
Gm Mamedov
Türkiye
Özet
Sub-bandgap absorption properties of indium selenide doped with boron atoms within a range of [B] = 0-1.8 at.% have been investigated. From the absorption coefficient spectra measured by using constant photocurrent method (CPM) at 300 K, we observed that the disorder in the structure increases. The calculated Urbach parameters, quantifying the disorder, vary from 17 to 53 meV, as [B] is increased from 0 to 1 at.%. Also the calculated optical gaps decrease from 1.28 eV to 1.17 eV for the same range of [B]. From temperature dependent dark conductivity measurements, the characteristic activation energies are calculated to range from 0.25 to 0.18 eV for vertical (to c-axis) direction; to stay almost constant for parallel (c-axis) direction. At a temperature of 12 K, the absorption coefficient spectra by using CPM and the radiative recombination spectra by photoluminescence (PL) have been taken for the samples with [B] = 0 and 0.5 at.%. Three main PL bands are observed at photon energies of ∼1.24, 1.306 and 1.337 eV. The PL bands are interpreted by corresponding absorption bands detected at 12 K and at the photon energies of ∼1.24, ∼1.31 and ∼1.35 eV.
Anahtar Kelimeler
CPM | Layered semiconductors | Photoluminescence
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı OPTICAL MATERIALS
Dergi ISSN 0925-3467
Dergi Tarandığı Indeksler SCI-Expanded
Dergi Grubu Q2
Makale Dili İngilizce
Basım Tarihi 11-2014
Cilt No 37
Sayfalar 70 / 73
Doi Numarası 10.1016/j.optmat.2014.04.047
Makale Linki http://dx.doi.org/10.1016/j.optmat.2014.04.047