Photoluminescence properties of boron doped InSe single crystals
      
Yazarlar (3)
Prof. Dr. Hüseyin ERTAP Kafkas Üniversitesi, Türkiye
A. Bacioʇlu Hacettepe Üniversitesi, Türkiye
M. Karabulut Kafkas Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Journal of Luminescence (Q2)
Dergi ISSN 0022-2313 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 11-2015
Cilt / Sayı / Sayfa 167 / 1 / 227–232 DOI 10.1016/j.jlumin.2015.06.045
Makale Linki http://dx.doi.org/10.1016/j.jlumin.2015.06.045
Özet
Abstract Undoped and boron doped InSe single crystals were grown by Bridgman-Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor-acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content.
Anahtar Kelimeler
Boron doped InSe single crystals | Photoluminescence | Exciton