Photoluminescence properties of boron doped InSe single crystals
Yazarlar (3)
Prof. Dr. Hüseyin ERTAP Kafkas Üniversitesi, Türkiye
A. Bacioʇlu
Hacettepe Üniversitesi, Türkiye
Hacettepe Üniversitesi, Türkiye
M. Karabulut
Kafkas Üniversitesi, Türkiye
Kafkas Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Journal of Luminescence (Q2) | ||
| Dergi ISSN | 0022-2313 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 11-2015 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-11-2015 |
| Cilt / Sayı / Sayfa | 167 / 1 / 227–232 | DOI | 10.1016/j.jlumin.2015.06.045 |
| Makale Linki | http://dx.doi.org/10.1016/j.jlumin.2015.06.045 | ||
| Özet |
| Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct … |
| Anahtar Kelimeler |
| Boron doped InSe single crystals | Exciton | Photoluminescence |
Science Direct
Photoluminescence properties of boron doped InSe single crystals
| Atıf Sayıları | |
| Google Scholar | 18 |
| Web of Science | 14 |
| Scopus | 14 |