Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals
   
Yazarlar (6)
Ahmet Karatay Ankara Üniversitesi, Türkiye
Mustafa Yüksek Kafkas Üniversitesi, Türkiye
Prof. Dr. Hüseyin ERTAP Kafkas Üniversitesi, Türkiye
Ali Kemal Mak Kafkas Üniversitesi, Türkiye
Mevlüt Karabulut Kafkas Üniversitesi, Türkiye
Ayhan Elmalı Ankara Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Optical Materials (Q2)
Dergi ISSN 0925-3467 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 10-2016
Cilt / Sayı / Sayfa 60 / 1 / 74–80 DOI 10.1016/j.optmat.2016.07.005
Makale Linki http://dx.doi.org/10.1016/j.optmat.2016.07.005
Özet
The nonlinear absorption properties and ultrafast dynamics of pure and boron doped GaSe crystals have been studied by open aperture Z-scan and ultrafast pump probe spectroscopy techniques. All of the studied crystals showed nonlinear absorption under 100 fs pulse duration and 1200 nm wavelength excitations. Nonlinear absorption coefficients increase with increasing the doping ratio of boron atoms in crystals. These findings indicate that free carrier density increase with boron doping and this behavior leads to excited state absorption. Second harmonic generation signals of crystals were detected with the help of fiber optic spectrometer. The blue shift in the energy of the second harmonic generation signals was observed in boron doped crystals. Ultrafast pump probe experiments indicate that the excited state absorption signal with long lifetime observed for undoped GaSe crystal switches to bleach signal …
Anahtar Kelimeler
Semiconductor | Nonlinear absorption | Z-scan | Ultrafast pump-probe | Doping effect
Science Direct
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
Google Scholar 34
Web of Science 32
Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals

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