Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals
Yazarlar (6)
Ahmet Karatay
Ankara Üniversitesi, Türkiye
Mustafa Yüksek
Kafkas Üniversitesi, Türkiye
Prof. Dr. Hüseyin ERTAP
Kafkas Üniversitesi, Türkiye
Ali Kemal Mak
Kafkas Üniversitesi, Türkiye
Mevlüt Karabulut
Kafkas Üniversitesi, Türkiye
Ayhan Elmalı
Ankara Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Optical Materials (Q2) | ||
| Dergi ISSN | 0925-3467 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 10-2016 |
| Cilt / Sayı / Sayfa | 60 / 1 / 74–80 | DOI | 10.1016/j.optmat.2016.07.005 |
| Makale Linki | http://dx.doi.org/10.1016/j.optmat.2016.07.005 | ||
| Özet |
| The nonlinear absorption properties and ultrafast dynamics of pure and boron doped GaSe crystals have been studied by open aperture Z-scan and ultrafast pump probe spectroscopy techniques. All of the studied crystals showed nonlinear absorption under 100 fs pulse duration and 1200 nm wavelength excitations. Nonlinear absorption coefficients increase with increasing the doping ratio of boron atoms in crystals. These findings indicate that free carrier density increase with boron doping and this behavior leads to excited state absorption. Second harmonic generation signals of crystals were detected with the help of fiber optic spectrometer. The blue shift in the energy of the second harmonic generation signals was observed in boron doped crystals. Ultrafast pump probe experiments indicate that the excited state absorption signal with long lifetime observed for undoped GaSe crystal switches to bleach signal for boron doped GaSe crystals at 625 nm probe wavelength. The effects of increasing doping ratio were observed on ultrafast dynamics as a switching time changes. Our experimental results indicate that it is possible to control nonlinear absorption properties, frequency conversion and ultrafast dynamics of GaSe crystal by changing boron doping ratio. |
| Anahtar Kelimeler |
| Semiconductor | Nonlinear absorption | Z-scan | Ultrafast pump-probe | Doping effect |
Science Direct
Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| WoS | 32 |
| SCOPUS | 30 |
| Google Scholar | 34 |