| Yazarlar (3) |
Serkan Eymur
Giresun Üniversitesi, Türkiye |
Dr. Öğr. Üyesi Naki KAYA
İstanbul Gelişim Üniversitesi, Türkiye |
|
Nihat Tuğluoğlu
Giresun Üniversitesi, Türkiye |
| Özet |
| Electrical properties of V2O5/n-Si Schottky barrier diodes prepared by rf magnetron sputtering of vanadium pentoxide (V2O5) on n-Si wafer have been investigated. The current-voltage (I–V) and capacitance-voltage (CV) measurements of the diode have been performed in the dark at the room temperature. The saturation current (I0), ideality factor (n), barrier height (ΦB) values of the diode have been determined as 6.68 x10-8 A, 1.35, and 0.755 eV, respectively. The series resistance (RS) values from Norde, Cheung and Nicollian & Brews methods have been determined as 199 Ω, 251 Ω, and 144 Ω, respectively. The energy distribution of interface state density (NSS) was determined, and the values of against the energy values of NSS in the vary between EC-0.462 eV and EC-0.713 eV were obtained 4.343 x1016 eV-1 cm-2 and 3.282 x1015 eV-1 cm-2, respectively. The barrier height and metal oxide thickness (ẟ … |
| Anahtar Kelimeler |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | Diğer hakemli uluslarası dergilerde yayınlanan tam makale |
| Dergi Adı | Journal of Advanced Applied Sciences |
| Dergi ISSN | 2 |
| Dergi Tarandığı Indeksler | international |
| Makale Dili | İngilizce |
| Basım Tarihi | 12-2022 |
| Cilt No | 1 |
| Sayı | 1 |
| Sayfalar | 24 / 31 |
