| Yazarlar (4) |
Enis Taşcı
Türkiye |
Dr. Öğr. Üyesi Naki KAYA
İstanbul Gelişim Üniversitesi, Türkiye |
|
Serkan Eymur
Türkiye |
|
Nihat Tuğluoğlu
Türkiye |
| Özet |
| HfO 2 thin film was deposited on p type Si substrate by radio frequency sputtering method for the fabrication of Au/HfO 2/p-Si Schottky diode. The capacitance (C) and conductance (G) properties of the Au/HfO 2/p-Si diode were examined at various frequencies and voltages. The properties of the diode were investigated within the voltage range of (-3V)-(+ 3V) and frequency range of 1 kHz-1 MHz. The characteristics of C and G against voltage of the diode were determined to be strongly dependent on bias frequency and voltage. The capacitance decreases significantly with increasing of the frequency, showing the existence of steady interface state density. The series resistance () and interfacial state density () distributions of the produced diode were tried to be clarified. The frequency dependency of the and were found using conductance and Hill–Coleman’s technique and it has been determined that the and decreases with increasing frequency from 997 Ω and 7.89 x10 11 eV-1 cm-2 for 1 kHz to 144 Ω and 2.49 x 10 11 eV-1 cm-2 for 1 MHz. The results of the study showed that the Au/HfO 2/p-Si structure fabricated by RF sputtering method can be used as a Schottky diode in electronic applications in a wide frequency range. |
| Anahtar Kelimeler |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | Diğer hakemli uluslarası dergilerde yayınlanan tam makale |
| Dergi Adı | Journal of Materials and Electronic Devices |
| Dergi ISSN | 2587-0424 |
| Dergi Tarandığı Indeksler | International |
| Makale Dili | İngilizce |
| Basım Tarihi | 10-2022 |
| Cilt No | 4 |
| Sayı | 1 |
| Sayfalar | 1 / 7 |
