Effects of boron doping in InSe single crystals on optical limiting performance in the near-infrared region
   
Yazarlar (7)
Anıl Doğan Ankara Üniversitesi, Türkiye
Yasemin Pepe Ankara Üniversitesi, Türkiye
Meliha Yağmur Bilgili Ankara Üniversitesi, Türkiye
Ahmet Karatay Ankara Üniversitesi, Türkiye
Prof. Dr. Hüseyin ERTAP Kafkas Üniversitesi, Türkiye
Mevlüt Karabulut Gebze Teknik Üniversitesi, Türkiye
Ayhan Elmalı Ankara Üniversitesi, Türkiye
Makale Türü Açık Erişim Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Physica Scripta (Q2)
Dergi ISSN 0031-8949 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili Türkçe Basım Tarihi 03-2024
Cilt / Sayı / Sayfa 99 / 4 / 45505–0 DOI 10.1088/1402-4896/ad21c6
Makale Linki http://dx.doi.org/10.1088/1402-4896/ad21c6
Özet
Identification of photonic materials with high infrared transmittance and high nonlinear optical coefficients is one of the main emphases in material science as a result of the rapid advancement in infrared photonics. In this study, undoped and B (boron) -doped InSe single crystals were grown by using the modified vertical Bridgman method, and their nonlinear optical properties were investigated to reveal their usability as an optical limiter in the near-infrared region. The decreasing band gap energies and increasing defect states were determined with increasing B concentration in InSe single crystals. The effect of the B concentration on the nonlinear absorption (NA) and optical limiting properties of the InSe single crystals was investigated via open aperture (OA) Z-scan experiments under ultrafast laser excitation at 1200 nm wavelength with 100 femtosecond pulse duration. Two-photon absorption (TPA) was the …
Anahtar Kelimeler
InSe single crystal | open aperture Z-scan | optical limiting | two photon absorption