Ruthenium (III)–pyridine complex: Synthesis, characterization, barrier diode and photodiode applications in Al/Ru‑Py/p‑Si/Al sandwich device structure
Yazarlar (1)
Doç. Dr. Ali YEŞİLDAĞ Kafkas Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Chemical Papers (Q3) | ||
| Dergi ISSN | 0366-6352 Dergi Bilgileri (2021) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 09-2021 |
| Cilt / Sayı / Sayfa | 75 / 9 / 4949–4958 | DOI | 10.1007/s11696-021-01715-7 |
| Makale Linki | https://link.springer.com/content/pdf/10.1007/s11696-021-01715-7.pdf | ||
| UAK Araştırma Alanları |
Analitik Kimya
Elektrokimya
Yüzey Kimyası
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| Özet |
| Ruthenium (III)–pyridine (Ru-Py) complex has been synthesized and characterized by NMR, IR, UV–Vis, fluorescence spectroscopy and HRMS. The crystal structure of the Ru-Py complex was determined by X-ray crystallography. The Ru-Py complex was coated on a p-type Si semiconductor by a spin coating method to obtain a Schottky barrier diode (SBD) device. Basic electrical parameters of the obtained Al/p-Si/Al MS and Al/Ru-Py/p-Si/Al SBD devices were calculated by using thermionic emission (TE) theory such as ideality factor (n) and barrier height (Φb). From the current–voltage (I–V) measurements, the n value of the reference Al/p-Si/Al MS structure was 1.55 and the Al/Ru-Py/p-Si/Al SBD structure was 1.24 at room temperature. The Ru-Py complex as interface material made the device behave more ideally and decreased the value of the ideality factor. Φb values of the reference MS and SBD devices were … |
| Anahtar Kelimeler |
| Electrical characterization | Photodiode | Ruthenium (III)–pyridine complex | Schottky barrier diode |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 15 |
| Google Scholar | 17 |