I V T current voltage temperature characteristics of the Au Anthraquinone p Si Al junction device
Yazarlar (6)
Z. Çaldiran
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
A. R. Deniz
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
F. Mehmet Coşkun
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
Ş Aydoǧan
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
Doç. Dr. Ali YEŞİLDAĞ Kafkas Üniversitesi, Türkiye
D. Ekinci
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Journal of Alloys and Compounds (Q1) | ||
| Dergi ISSN | 0925-8388 Dergi Bilgileri (2014) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 01-2014 |
| Cilt / Sayı / Sayfa | 584 / 1 / 652–657 | DOI | 10.1016/j.jallcom.2013.09.006 |
| Makale Linki | https://www.sciencedirect.com/science/article/pii/S0925838813021440 | ||
| UAK Araştırma Alanları |
Analitik Kimya
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| Özet |
| The current–voltage measurements of the Au/Anthraquinone/p-Si/Al junction device have been carried out in the temperature range of 80–280 K. It has been observed that the anthraquinone film increases the effective barrier height of the Au/p-Si/Al by influencing the space charge region of p-Si from 0.77 eV to 0.85 eV at 280 K. The current–voltage measurements of the Au/Anthraquinone/p-Si/Al junction device show a decrease of the barrier height and an increase in the ideality factor at low temperatures. The dependence of the ideality factor and barrier height on temperature has been attributed the spatial inhomogeneity in the interface. The non-linearity behavior has been seen in the Richardson plots and the values of activation energy (Ea) and the Richardson constant (A∗) has been determined as 0.08 eV and 3.19 × 10−8 A cm−2 K−2 from the slope and the intercept at ordinate of the linear region of … |
| Anahtar Kelimeler |
| Anthraquinone | Organic materials | Rectifying device | Series resistance |
Science Direct
I V T current voltage temperature characteristics of the Au Anthraquinone p Si Al junction device
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 34 |
| Google Scholar | 31 |
| Google Scholar | 21 |