The Barrier height enhancement of the Au n Si Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n Si
Yazarlar (5)
Z. Çaldiran
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
A. R. Deniz
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
Ş Aydoǧan
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
Doç. Dr. Ali YEŞİLDAĞ Atatürk Üniversitesi, Türkiye
D. Ekinci
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Superlattices and Microstructures (Q2) | ||
| Dergi ISSN | 0749-6036 Dergi Bilgileri (2013) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 04-2013 |
| Cilt / Sayı / Sayfa | 56 / 1 / 45–54 | DOI | 10.1016/j.spmi.2012.12.004 |
| Makale Linki | https://www.sciencedirect.com/science/article/pii/S0749603612003345 | ||
| UAK Araştırma Alanları |
Analitik Kimya
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| Özet |
| In this work, an Au/Anthracene/n-Si/Al Schottky barrier diode was fabricated and it was found that the diode showed good rectification properties. The characteristic parameters of the device such as barrier height, ideality factor, interface states density and series resistance were determined from the current–voltage measurements. It was seen that the Anthracene organic layer increased the effective barrier height of the Au/n-Si/Al diode since this layer creates the physical barrier between the Au and n-Si. Furthermore, the current–voltage characteristics under forward bias were found to be ohmic due to conduction at lower voltage regions. At higher voltage regions there is space charge limited conduction (SCLC) mechanism. Furthermore, the capacitance–voltage curves of the Au/Anthracene/n-Si/Al Schottky barrier diode were analyzed in the various frequencies as a function of the bias. |
| Anahtar Kelimeler |
| Anthracene | Organic film | Schottky barrier height | Series resistance |
Science Direct
The Barrier height enhancement of the Au n Si Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n Si
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 61 |
| Google Scholar | 86 |