The analysis of the currentevoltage characteristics of the high barrierAu Anthracene n Si MIS devices at low temperatures
Yazarlar (6)
H. Kaçuş
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
A. R. Deniz
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
Z. Çaldiran
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
Ş Aydoǧan
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
Doç. Dr. Ali YEŞİLDAĞ Kafkas Üniversitesi, Türkiye
D. Ekinci
Atatürk Üniversitesi, Türkiye
Atatürk Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Materials Chemistry and Physics (Q2) | ||
| Dergi ISSN | 0254-0584 Dergi Bilgileri (2014) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 01-2014 |
| Cilt / Sayı / Sayfa | 143 / 2 / 545–551 | DOI | 10.1016/j.matchemphys.2013.09.030 |
| Makale Linki | https://www.sciencedirect.com/science/article/pii/S0254058413007104 | ||
| UAK Araştırma Alanları |
Analitik Kimya
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| Özet |
| The Au/Anthracene/n-Si/Al MIS device was fabricated on the basis of anthracene film covalently bonded to a Si substrate. The MIS device showed Schottky behavior with barrier heights of 0.85 eV and ideality factors of 1.88 at 300 K. The barrier height of the Au/n-Si has increased after deposition of the anthracene layer onto Si. Temperature dependent current–voltage (I–V) measurements were performed on the Au/Anthracene/n-Si/Al MIS diodes in the range 140–300 K. From the temperature dependence of forward bias I–V, the barrier height was observed to increase with temperature. However, the ideality factor decreased with increasing temperature. The values of activation energy (Ea) and Richardson constant (A*) were determined as 0.24 eV and 7.57 × 10−6 A cm−2 K−2 from the slope and the intercept at ordinate of the linear region of Richardson plot, respectively. The increase of the series resistance Rs … |
| Anahtar Kelimeler |
| Electronic materials | Heterostructures | Interfaces | Organic compounds |
Science Direct
The analysis of the currentevoltage characteristics of the high barrierAu Anthracene n Si MIS devices at low temperatures
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 17 |
| Google Scholar | 30 |