Temperature dependent current voltage measurements of Au C9H7N p Si Characterization of a metal organic semiconductor device
Yazarlar (6)
Z. Çaldiran
Atatürk Üniversitesi, Türkiye
S. Aydoʇan
Atatürk Üniversitesi, Türkiye
Doç. Dr. Ali YEŞİLDAĞ Kafkas Üniversitesi, Türkiye
D. Ekinci
Atatürk Üniversitesi, Türkiye
S. V. Kurudirek
Atatürk Üniversitesi, Türkiye
A. Türüt
Istanbul Medeniyet University, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Materials Science in Semiconductor Processing (Q1)
Dergi ISSN 1369-8001 Dergi Bilgileri (2015)
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 06-2015
Cilt / Sayı / Sayfa 34 / 1 / 58–64 DOI 10.1016/j.mssp.2015.02.023
Makale Linki https://linkinghub.elsevier.com/retrieve/pii/S1369800115001031
UAK Araştırma Alanları
Analitik Kimya
Özet
The attachment of organic molecules onto the silicon surfaces is of crucial interest for the development of nanoscale organic–inorganic hybrid materials. In this study, the electrografting of diazonium salts has been used for covalent attachment of the molecules to H-passivated silicon (100) surface. The modification of silicon electrodes with quinoline molecules was carried out through electrochemical reduction of in situ generated diazonium salts from 6-aminoquinoline, and thus an Au/quinoline/p-Si device was fabricated. The results measured from the as-deposited device displayed a higher barrier height at room temperature due to the formation of an interfacial dipole at a metal/organic interface during electrochemical deposition. It has been shown that the barrier height value was increased with the increasing temperature. In addition, there were seen two different behaviours of the temperature-dependent ideality …
Anahtar Kelimeler
Low temperature | Metal-organic-semiconductor device | Organic film | Quinoline