| Yazarlar |
Mevlüt Karabulut
Kafkas Üniversitesi, Türkiye |
Prof. Dr. Gökhan BİLİR
Kafkas Üniversitesi, Türkiye |
|
G M Mamedov
Türkiye |
|
Ayşe Seyhan
Niğde Üniversitesi, Türkiye |
|
Raşit Turan
Orta Doğu Teknik Üniversitesi, Türkiye |
| Özet |
| GaSe single crystals were N-implanted along c-axis with ion beams of 1014 and 1016 ions/cm2 doses having energy values of 60 and 100 keV. The photoluminescence (PL) spectra of undoped and N-implanted GaSe crystals were measured at different temperatures. The PL intensity was observed to decrease with increasing implantation dose while the FWHM of the exciton peaks increased. In heavily doped crystals, due to the interaction with the radiation induced disorders, the wave vector selection rules are satisfied and an indirect exciton PL band is observed 36 meV below the direct exciton states. © 2008 Elsevier B.V. All rights reserved. |
| Anahtar Kelimeler |
| Bridgman | Exciton photoluminescence | GaSe | N implantation |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | Journal of Luminescence |
| Dergi ISSN | 0022-2313 |
| Dergi Tarandığı Indeksler | SCI-Exp, SCOPUS, Curation, Current Contents Physical Chemical & Earth Sciences, Essential Science Indicators, Pdf2xml, Pdf2xml, Reference Master, Sophia |
| Makale Dili | İngilizce |
| Basım Tarihi | 10-2008 |
| Cilt No | 128 |
| Sayı | 10 |
| Sayfalar | 1551 / 1555 |
| Doi Numarası | 10.1016/j.jlumin.2008.02.014 |
| Makale Linki | http://linkinghub.elsevier.com/retrieve/pii/S0022231308000744 |
| Atıf Sayıları | |
| WoS | 8 |
| SCOPUS | 8 |
| Google Scholar | 13 |
