Photoluminescence spectra of nitrogen implanted GaSe crystals
Yazarlar (5)
M. Karabulut
Kafkas Üniversitesi, Türkiye
Kafkas Üniversitesi, Türkiye
Prof. Dr. Gökhan BİLİR Kafkas Üniversitesi, Türkiye
G. M. Mamedov
Kafkas Üniversitesi, Türkiye
Kafkas Üniversitesi, Türkiye
A. Seyhan Middle East Technical University (Metu), Türkiye
R. Turan Middle East Technical University (Metu), Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Journal of Luminescence | ||
| Dergi ISSN | 0022-2313 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 10-2008 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-10-2008 |
| Cilt / Sayı / Sayfa | 128 / 10 / 1551–1555 | DOI | 10.1016/j.jlumin.2008.02.014 |
| Makale Linki | http://linkinghub.elsevier.com/retrieve/pii/S0022231308000744 | ||
| Özet |
| GaSe single crystals were N-implanted along c-axis with ion beams of 1014 and 1016ions/cm2 doses having energy values of 60 and 100keV. The photoluminescence (PL) spectra of undoped and N-implanted GaSe crystals were measured at different temperatures. The PL intensity was observed to decrease with increasing implantation dose while the FWHM of the exciton peaks increased. In heavily doped crystals, due to the interaction with the radiation induced disorders, the wave vector selection rules are satisfied and an indirect exciton PL band is observed 36meV below the direct exciton states. |
| Anahtar Kelimeler |
| Bridgman | Exciton photoluminescence | GaSe | N implantation |
Science Direct
Photoluminescence spectra of nitrogen implanted GaSe crystals
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Google Scholar | 10 |
| Web of Science | 8 |
| Scopus | 8 |